Impurity Effects on Alumina Scale Growth

Impurity Effects on the Growth Kinetics of 4He Crystals

We report the growth kinetics of the 4He crystals with a small amount of 3He impurities around 0.8 K. The growth resistance was measured using the response of the charged interface with respect to an externally applied voltage. In 5ppm and lOppm 3He mixtures, it is found that ( I ) the relaxation process can be expressed as an exponential behavior, ( 2 ) the growth resistance becomes larger com...

In Situ Measurement of Growth Stress in Alumina Scale

n the early stages of growth has been measured in α-Al2O3 (alumina) scales formed on and NiAl-based alloys during heating in air at 1000 to 1200°C. Scale thickness rom 0.5 to 5 μm, times from 5 to 720 min. Stress was measured using the multiple-tilt . In order to measure the thinnest scales at the earliest times, focused, monochromatic tron radiation was used for high intensity, and a fixed, sm...

Growth without Scale Effects

Atomic Scale Mechanism of the Transformation of -Alumina to -Alumina

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Anodization of nanoporous alumina on impurity-induced hemisphere curved surface of aluminum at room temperature

Nanoporous alumina which was produced by a conventional direct current anodization [DCA] process at low temperatures has received much attention in various applications such as nanomaterial synthesis, sensors, and photonics. In this article, we employed a newly developed hybrid pulse anodization [HPA] method to fabricate the nanoporous alumina on a flat and curved surface of an aluminum [Al] fo...